SIS443DN-T1-GE3概述
VISHAY SIS443DN-T1-GE3 晶体管, MOSFET, P沟道, -35 A, -40 V, 0.0097 ohm, -10 V, -1 V
The is a -40V P-channel TrenchFET® Power MOSFET. Suitable for use in notebook battery charging, DC/DC converter and adapter switch applications. The P-channel MOSFET for switching applications are now available with die on resistances around 1mR and with the capability to handle 85A.
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- Halogen-free according to IEC 61249-2-21 definition
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- 100% Rg Tested
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- 100% UIS Tested
SIS443DN-T1-GE3中文资料参数规格
技术参数
针脚数 8
漏源极电阻 0.0097 Ω
极性 P-Channel
耗散功率 52 W
输入电容Ciss 4370pF @20VVds
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3700 mW
封装参数
引脚数 8
封装 PowerPAK-1212-8
外形尺寸
高度 1.04 mm
封装 PowerPAK-1212-8
其他
包装方式 Tape & Reel TR
制造应用 Power Management, 消费电子产品, 计算机和计算机周边, Consumer Electronics, 电源管理, Computers & Computer Peripherals
符合标准
RoHS标准 RoHS Compliant
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型号： SIS443DN-T1-GE3
描述：VISHAY SIS443DN-T1-GE3 晶体管, MOSFET, P沟道, -35 A, -40 V, 0.0097 ohm, -10 V, -1 V