VISHAY SIR866DP-T1-GE3 场效应管, MOSFET, N通道, 20V, 60A, SOIC, 整卷
The is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for fixed telecom, low-side DC-to-DC and O-ring applications.
针脚数 8
漏源极电阻 0.0015 Ω
极性 N-Channel
耗散功率 5.4 W
阈值电压 2.3 V
漏源极电压Vds 20 V
连续漏极电流Ids 60.0 A
工作温度Max 150 ℃
引脚数 8
封装 PowerPAK SO
工作温度 -55℃ ~ 150℃
RoHS标准 RoHS Compliant
含铅标准 Lead Free
数据手册