SIA437DJ-T1-GE3

VISHAY  SIA437DJ-T1-GE3  晶体管, MOSFET, P沟道, -29.7 A, -20 V, 0.012 ohm, -4.5 V, -400 mV

The is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and battery switch applications.

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Thermally enhanced PowerPAK® package

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Small footprint area

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Low ON-resistance

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100% Rg tested

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Halogen-free

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-55 to 150°C Operating temperature range