VISHAY SIR662DP-T1-GE3 晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0022 ohm, 10 V, 1 V
The is a 60V N-channel TrenchFET® Power MOSFET. Suitable for use in synchronous rectification, primary side switch, amusement system, DC/DC converter and point of load converter circuits. The N-channel MOSFET for switching applications are now available with die on resistances around 1mR and with the capability to handle 85A.
针脚数 8
漏源极电阻 0.0022 Ω
极性 N-Channel
耗散功率 104 W
阈值电压 1 V
漏源极电压Vds 60 V
工作温度Max 150 ℃
安装方式 Surface Mount
引脚数 8
封装 PowerPAKSO-8
长度 6.15 mm
宽度 5.15 mm
高度 1.04 mm
封装 PowerPAKSO-8
工作温度 -55℃ ~ 150℃
包装方式 Tape & Reel TR
制造应用 电源管理, Power Management, Industrial, 工业
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99