SI3467DV-T1-GE3

SI3467DV-T1-GE3图片1
SI3467DV-T1-GE3中文资料参数规格
封装参数

安装方式 Surface Mount

封装 TSOP-6

外形尺寸

封装 TSOP-6

其他

Packaging Reel

Part-Aliases SI3467DV-GE3

Unit-Weight 0.000705 oz

Mounting-Style SMD/SMT

Package-Case TSOP-6

Technology Si

Number-of-Channels 1 Channel

Configuration Single

Transistor-Type 1 P-Channel

Pd-Power-Dissipation 1.14 W

Maximum-Operating-Temperature \+ 150 C

Minimum-Operating-Temperature \- 55 C

Vgs-Gate-Source-Voltage 20 V

Id-Continuous-Drain-Current 3.8 A

Vds-Drain-Source-Breakdown-Voltage \- 20 V

Rds-On-Drain-Source-Resistance 54 mOhms

Transistor-Polarity P-Channel

数据手册

在线购买SI3467DV-T1-GE3
型号: SI3467DV-T1-GE3
描述:MOSFET 20V 5A 2W 54mohm @ 10V

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