SI1031X-T1-GE3

SI1031X-T1-GE3图片1
SI1031X-T1-GE3中文资料参数规格
封装参数

封装 SC-89-3

外形尺寸

封装 SC-89-3

其他

Packaging Reel

Part-Aliases SI1031X-GE3

Unit-Weight 0.001058 oz

Mounting-Style SMD/SMT

Package-Case SC-89-3

Technology Si

Number-of-Channels 1 Channel

Configuration Single

Transistor-Type 1 P-Channel

Pd-Power-Dissipation 300 mW

Maximum-Operating-Temperature \+ 150 C

Minimum-Operating-Temperature \- 55 C

Fall-Time 30 ns

Rise-Time 30 ns

Vgs-Gate-Source-Voltage 6 V

Id-Continuous-Drain-Current 155 mA

Vds-Drain-Source-Breakdown-Voltage \- 20 V

Rds-On-Drain-Source-Resistance 8 Ohms

Transistor-Polarity P-Channel

Typical-Turn-Off-Delay-Time 60 ns

Typical-Turn-On-Delay-Time 55 ns

Channel-Mode Enhancement

数据手册

在线购买SI1031X-T1-GE3
型号: SI1031X-T1-GE3
描述:P通道20 -V (D -S )的MOSFET P-Channel 20-V D-S MOSFET

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