VISHAY SIHP6N40D-GE3 晶体管, MOSFET, N沟道, 6 A, 400 V, 0.85 ohm, 10 V, 3 V
The is a 400V N-channel high voltage MOSFET with low area specific on-resistance and low input capacitance. This D series MOSFET is used in displays, server and telecom power supply applications.
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- Reduced capacitive switching losses
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- High body diode ruggedness
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- Optimal efficiency and operation due to simple gate drive circuitry
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- Low figure of merit Ron X Qg
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- 100% Avalanche rated
通道数 1
针脚数 3
漏源极电阻 0.85 Ω
极性 N-Channel
耗散功率 104 W
阈值电压 3 V
漏源极电压Vds 400 V
输入电容Ciss 311pF @100VVds
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 104 W
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.51 mm
宽度 4.65 mm
高度 9.01 mm
封装 TO-220-3
包装方式 Tape & Reel TR
制造应用 消费电子产品, 电源管理, Industrial, 工业, Consumer Electronics, Power Management
RoHS标准 RoHS Compliant
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
SIHP6N40D-GE3 Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
IRF730PBF 威世 | 功能相似 | SIHP6N40D-GE3和IRF730PBF的区别 |