SI4384DY-T1-GE3

SI4384DY-T1-GE3图片1
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SI4384DY-T1-GE3中文资料参数规格
封装参数

封装 SOIC-8

外形尺寸

封装 SOIC-8

其他

Packaging Reel

Part-Aliases SI4384DY-GE3

Unit-Weight 0.006596 oz

Mounting-Style SMD/SMT

Package-Case SOIC-Narrow-8

Technology Si

Number-of-Channels 1 Channel

Configuration Single

Transistor-Type 1 N-Channel

Pd-Power-Dissipation 1.47 W

Maximum-Operating-Temperature \+ 150 C

Minimum-Operating-Temperature \- 55 C

Fall-Time 13 ns

Rise-Time 13 ns

Vgs-Gate-Source-Voltage 20 V

Id-Continuous-Drain-Current 10 A

Vds-Drain-Source-Breakdown-Voltage 30 V

Rds-On-Drain-Source-Resistance 8.5 mOhms

Transistor-Polarity N-Channel

Typical-Turn-Off-Delay-Time 45 ns

Typical-Turn-On-Delay-Time 10 ns

Channel-Mode Enhancement

符合标准

RoHS标准 RoHS Compliant

数据手册

在线购买SI4384DY-T1-GE3
型号: SI4384DY-T1-GE3
描述:MOSFET 30V 15A 3.1W 8.5mohm @ 10V

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