SI4427BDY-T1-GE3

MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V

The is a 30VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.

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Halogen-free

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-55 to 150°C Operating temperature range

得捷:
MOSFET P-CH 30V 9.7A 8SOIC

贸泽:
MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V

艾睿:
Trans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R

安富利:
Trans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R

Chip1Stop:
Trans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R

Newark:
# VISHAY  SI4427BDY-T1-GE3  MOSFET Transistor, P Channel, -12.6 A, -30 V, 0.0088 ohm, -2.5 V, -1.4 V