VISHAY SUP85N03-3M6P-GE3 晶体管, MOSFET, N沟道, 85 A, 30 V, 0.003 ohm, 10 V, 1 V
The is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC converter and power supply applications.
针脚数 3
漏源极电阻 0.003 Ω
极性 N-Channel
耗散功率 78.1 W
阈值电压 1 V
漏源极电压Vds 30 V
工作温度Max 175 ℃
安装方式 Through Hole
引脚数 3
封装 TO-220-3
包装方式 Bulk
制造应用 Industrial, Power Management
RoHS标准 RoHS Compliant
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
数据手册