SI4866DY-T1-GE3

SI4866DY-T1-GE3图片1
SI4866DY-T1-GE3图片2
SI4866DY-T1-GE3中文资料参数规格
封装参数

封装 SOIC-8

外形尺寸

封装 SOIC-8

其他

Packaging Reel

Part-Aliases SI4866DY-GE3

Unit-Weight 0.006596 oz

Mounting-Style SMD/SMT

Package-Case SOIC-Narrow-8

Technology Si

Number-of-Channels 1 Channel

Configuration Single

Transistor-Type 1 N-Channel

Pd-Power-Dissipation 1.6 W

Maximum-Operating-Temperature \+ 150 C

Minimum-Operating-Temperature \- 55 C

Vgs-Gate-Source-Voltage 8 V

Id-Continuous-Drain-Current 17 A

Vds-Drain-Source-Breakdown-Voltage 12 V

Rds-On-Drain-Source-Resistance 5.5 mOhms

Transistor-Polarity N-Channel

数据手册

在线购买SI4866DY-T1-GE3
型号: SI4866DY-T1-GE3
描述:MOSFET 12V 17A 3W 5.5mohm @ 4.5V

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