SI7370DP-T1-GE3

VISHAY  SI7370DP-T1-GE3  晶体管, MOSFET, N沟道, 9.6 A, 60 V, 0.009 ohm, 10 V, 4 V

The is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for primary side switch and secondary synchronous rectifier applications.

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New low thermal resistance PowerPAK® package with small size and low 1.07mm profile

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PWM optimized

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Fast switching

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100% Rg tested

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Halogen-free

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-55 to 150°C Operating temperature range