VISHAY SIHP12N60E-GE3 功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 2 V
The is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.
针脚数 3
漏源极电阻 0.32 Ω
极性 N-Channel
耗散功率 147 W
阈值电压 2 V
漏源极电压Vds 600 V
上升时间 19 ns
输入电容Ciss 937pF @100VVds
下降时间 19 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 147 W
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.51 mm
宽度 4.65 mm
高度 9.01 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃
包装方式 Tube
制造应用 Industrial, Lighting, Alternative Energy, Motor Drive & Control, Portable Devices, Computers & Computer Peripherals, Communications & Networking, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free