SIHP12N50E-GE3参数规格_中文资料_数据手册PDF

SIHP12N50E-GE3概述

VISHAY SIHP12N50E-GE3. 场效应管, MOSFET, N沟道, 500V, 10.5A, TO220AB-3

The is an E series N-channel enhancement-mode Power MOSFET suitable for computing, lighting, consumer electronics, switch mode power supplies and hard switched topology applications.

.: Low figure-of-merit FOM Ron x Qg

.: Low input capacitance CISS

.: Reduced switching

.: Reduced conduction losses

.: Low gate charge Qg

.: Avalanche energy rated UIS

.: Halogen-free

SIHP12N50E-GE3中文资料参数规格

技术参数

针脚数 3

漏源极电阻 0.33 Ω

极性 N-Channel

耗散功率 114 W

阈值电压 4 V

漏源极电压Vds 500 V

工作温度Max 150 ℃

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

其他

包装方式 Tape & Reel TR

制造应用 Industrial, LED Lighting, Consumer Electronics, Portable Devices, Power Management

符合标准

RoHS标准 RoHS Compliant

数据手册

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型号： SIHP12N50E-GE3

制造商： Vishay Semiconductor 威世

描述：VISHAY SIHP12N50E-GE3. 场效应管, MOSFET, N沟道, 500V, 10.5A, TO220AB-3

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