VISHAY SIHP22N60E-GE3. 场效应管, MOSFET, N沟道, 600V, 21A, TO-220AB-3
The is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.
- .
- Low figure-of-meritFOM RON x Qg
- .
- Low input capacitance CISS
- .
- Reduced switching and conduction losses
- .
- Ultra low gate charge
- .
- Avalanche energy rated
- .
- Halogen-free
通道数 1
针脚数 3
漏源极电阻 0.15 Ω
极性 N-Channel
耗散功率 227 W
阈值电压 2 V
漏源极电压Vds 600 V
上升时间 68 ns
输入电容Ciss 1920pF @100VVds
下降时间 54 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 227 W
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.51 mm
宽度 4.65 mm
高度 9.01 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃
包装方式 Tube
制造应用 Power Management, Computers & Computer Peripherals, Industrial, Portable Devices, Alternative Energy, Lighting, Communications & Networking, Motor Drive & Control
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
SIHP22N60E-GE3 Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
SIHP22N60E-E3 威世 | 完全替代 | SIHP22N60E-GE3和SIHP22N60E-E3的区别 |
SPP20N60C3 英飞凌 | 功能相似 | SIHP22N60E-GE3和SPP20N60C3的区别 |
SPP20N60C3XKSA1 英飞凌 | 功能相似 | SIHP22N60E-GE3和SPP20N60C3XKSA1的区别 |