VISHAY SUD40N02-08-E3 晶体管, MOSFET, N沟道, 40 A, 20 V, 8.5 mohm, 4.5 V, 600 mV
**Features:
* **Halogen-Free Option Available
* Low-Side Switching
* Low On-Resistance: 5 Ω
* Low Threshold: 0.9 V Typ.
* Fast Switching Speed: 35 ns Typ.
* TrenchFET® Power MOSFETs: 1.5 V Rated
* ESD Protected: 2000 V
**Applications:
**
* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
* Battery Operated Systems
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers
e络盟:
VISHAY SUD40N02-08-E3 晶体管, MOSFET, N沟道, 40 A, 20 V, 8.5 mohm, 4.5 V, 600 mV
艾睿:
Trans MOSFET N-CH 20V 40A 3-Pin2+Tab DPAK
Allied Electronics:
MOSFET; N-Channel 20V 14MOHM@2.5VGS PWMOptimized
针脚数 3
漏源极电阻 0.0068 Ω
极性 N-Channel
耗散功率 71 W
阈值电压 600 mV
输入电容 2660pF @20V
漏源极电压Vds 20 V
漏源击穿电压 20 V
栅源击穿电压 ±12.0 V
连续漏极电流Ids 40.0 A
热阻 2.1℃/W RθJC
下降时间 35 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 3
封装 TO-252
长度 6.73 mm
高度 2.38 mm
封装 TO-252
工作温度 -55℃ ~ 175℃
包装方式 Cut Tape CT
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15