



N沟道600V - 0.45ohm - 13.5A TO- 220 / FP / D2PAK / I2PAK / TO- 247齐纳保护超网功率MOSFET N-CHANNEL 600V-0.45ohm-13.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
Applications
■ Switching application
额定电压DC 600 V
额定电流 13.5 A
漏源极电阻 500 mΩ
极性 N-Channel
耗散功率 160W Tc
漏源极电压Vds 600 V
漏源击穿电压 600 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 13.5 A
输入电容Ciss 2220pF @25VVds
耗散功率Max 160W Tc
安装方式 Through Hole
封装 TO-247-3
封装 TO-247-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Obsolete
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STW14NK60Z ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STW20NK50Z 意法半导体 | 功能相似 | STW14NK60Z和STW20NK50Z的区别 |
STP5NK100Z 意法半导体 | 功能相似 | STW14NK60Z和STP5NK100Z的区别 |
STP80NF10 意法半导体 | 功能相似 | STW14NK60Z和STP80NF10的区别 |