SI1025X-T1-GE3

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SI1025X-T1-GE3概述

VISHAY  SI1025X-T1-GE3  场效应管, MOSFET, P通道, -60V, -500MA, SC-89, 整卷

The is a P-channel MOSFET designed for use with relays, solenoids, lamps, hammers, displays, memories and transistor driver, battery operated systems, power supply converter circuits and solid state relay applications. It offers ease in driving switches, low offset voltage, low-voltage operation, high-speed circuits, easily driven without buffer and small board area.

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Halogen-free
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TrenchFET® power MOSFET
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High-side switching
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4R Low ON-resistance
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2V Low threshold
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20ns Fast switching speed
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23pF Low input capacitance
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Miniature package
SI1025X-T1-GE3中文资料参数规格
技术参数

针脚数 6

漏源极电阻 8 Ω

极性 P-Channel

耗散功率 250 mW

漏源极电压Vds -60.0 V

连续漏极电流Ids -500 mA

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 0.25 W

封装参数

安装方式 Surface Mount

引脚数 6

封装 SC-89-6

外形尺寸

长度 1.7 mm

宽度 1.2 mm

高度 0.6 mm

封装 SC-89-6

物理参数

工作温度 -55℃ ~ 150℃

其他

包装方式 Tape & Reel TR

制造应用 Industrial, Power Management

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/06/15

数据手册

在线购买SI1025X-T1-GE3
型号: SI1025X-T1-GE3
描述:VISHAY  SI1025X-T1-GE3  场效应管, MOSFET, P通道, -60V, -500MA, SC-89, 整卷

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