VISHAY SI4599DY-T1-GE3 双路场效应管, MOSFET, N和P沟道, 6.8 A, 40 V, 29.5 mohm, 10 V, 1.4 V
The is a 40V Dual N and P-channel TrenchFET® Power MOSFET. Suitable for backlight inverter for LCD display and full bridge converter applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
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- Halogen-free according to IEC 61249-2-21 definition
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- 100% Rg Tested
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- 100% UIS Tested
针脚数 8
漏源极电阻 0.0295 Ω
极性 N-Channel, P-Channel
耗散功率 3 W
阈值电压 1.4 V
漏源极电压Vds 40 V
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3 W
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.55 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃
包装方式 Tape & Reel TR
制造应用 Power Management, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
SI4599DY-T1-GE3 Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
IRF7319PBF 国际整流器 | 功能相似 | SI4599DY-T1-GE3和IRF7319PBF的区别 |
SI4567DY-T1-E3 威世 | 功能相似 | SI4599DY-T1-GE3和SI4567DY-T1-E3的区别 |