VISHAY SI4532CDY-T1-GE3 双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 38 mohm, 10 V, 1 V
The is a 30V Dual N and P-channel TrenchFET® Power MOSFET. Suitable for DC to DC converters and load switch applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
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- Halogen-free according to IEC 61249-2-21 definition
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- 100% Rg Tested
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- 100% UIS Tested
针脚数 8
漏源极电阻 0.038 Ω
极性 N-Channel, P-Channel
耗散功率 2.78 W
阈值电压 1 V
漏源极电压Vds 30 V
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.78 W
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
包装方式 Tape & Reel TR
制造应用 电源管理, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
SI4532CDY-T1-GE3 Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
SI4532ADY-T1-E3 威世 | 类似代替 | SI4532CDY-T1-GE3和SI4532ADY-T1-E3的区别 |
PHC21025,118 恩智浦 | 功能相似 | SI4532CDY-T1-GE3和PHC21025,118的区别 |
SI4511DY-T1-GE3 威世 | 功能相似 | SI4532CDY-T1-GE3和SI4511DY-T1-GE3的区别 |