SI4202DY-T1-GE3

VISHAY  SI4202DY-T1-GE3  晶体管, MOSFET, N沟道, 12.1 A, 30 V, 0.0115 ohm, 10 V, 1 V

**Features:

* **Halogen-Free Option Available

* Low-Side Switching

* Low On-Resistance: 5 Ω

* Low Threshold: 0.9 V Typ.

* Fast Switching Speed: 35 ns Typ.

* TrenchFET® Power MOSFETs: 1.5 V Rated

* ESD Protected: 2000 V

**Applications:

**

* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

* Battery Operated Systems

* Power Supply Converter Circuits

* Load/Power Switching Cell Phones, Pagers

欧时:
### 双 N 通道 MOSFET，Vishay Semiconductor### MOSFET 晶体管，Vishay Semiconductor

e络盟:
VISHAY  SI4202DY-T1-GE3  晶体管, MOSFET, N沟道, 12.1 A, 30 V, 0.0115 ohm, 10 V, 1 V

艾睿:
Trans MOSFET N-CH 30V 9.7A 8-Pin SOIC N T/R

Allied Electronics:
SI4202DY-T1-GE3 Dual N-channel MOSFET Transistor, 12.1 A, 30 V, 8-Pin SOIC

安富利:
Trans MOSFET N-CH 30V 9.7A 8-Pin SOIC N T/R

富昌:
双 N沟道 20 V 14 mOhm 表面贴装 TrenchFET 功率 Mosfet - SOIC-8

Verical:
Trans MOSFET N-CH 30V 9.7A 8-Pin SOIC N T/R