VISHAY SI3590DV-T1-GE3 双路场效应管, MOSFET, N和P沟道, 2.5 A, 30 V, 0.062 ohm, 4.5 V, 1.5 V
The is a 30V Dual N and P-channel TrenchFET® Power MOSFET. Ultra low RDSon for high Efficiency and optimized for high side and low side operation. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
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- Halogen-free according to IEC 61249-2-21 definition
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- Low conduction losses
针脚数 6
漏源极电阻 0.062 Ω
极性 N-Channel, P-Channel
耗散功率 830 mW
阈值电压 1.5 V
漏源极电压Vds 30 V
连续漏极电流Ids 2.00 A
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 830 mW
安装方式 Surface Mount
引脚数 6
封装 TSOP
高度 1 mm
封装 TSOP
包装方式 Tape & Reel TR
制造应用 电源管理, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
SI3590DV-T1-GE3 Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
BSL316C L6327 英飞凌 | 功能相似 | SI3590DV-T1-GE3和BSL316C L6327的区别 |