SI1029X-T1-GE3概述
VISHAY SI1029X-T1-GE3 双路场效应管, MOSFET, N和P沟道, 305 mA, 60 V, 1.4 ohm, 10 V, 2.5 V
The is a N/P-channel complementary MOSFET designed for use with replace digital transistor, level-shifter, battery operated systems and power supply converter circuits applications. It offers ease in driving switches, low offset error voltage, low-voltage operation and high-speed circuits.
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- Halogen-free
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- TrenchFET® power MOSFET
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- Very small footprint
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- High-side switching
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- Low ON-resistance
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- ±2V Low threshold
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- 15ns Fast switching speed
SI1029X-T1-GE3中文资料参数规格
技术参数
针脚数 6
漏源极电阻 1.4 Ω
极性 N-Channel, P-Channel
耗散功率 250 mW
阈值电压 2.5 V
漏源极电压Vds 60 V
连续漏极电流Ids 305 mA
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 0.25 W
封装参数
安装方式 Surface Mount
引脚数 6
封装 SC-89
外形尺寸
长度 1.7 mm
宽度 1.7 mm
高度 0.6 mm
封装 SC-89
其他
包装方式 Tape & Reel TR
制造应用 Power Management, Industrial
符合标准
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
海关信息
ECCN代码 EAR99
在线购买SI1029X-T1-GE3
型号： SI1029X-T1-GE3
描述：VISHAY SI1029X-T1-GE3 双路场效应管, MOSFET, N和P沟道, 305 mA, 60 V, 1.4 ohm, 10 V, 2.5 V