SIHD12N50E-GE3

VISHAY  SIHD12N50E-GE3  晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V

The is an E series N-channel enhancement-mode Power MOSFET suitable for computing, lighting, consumer electronics, switch mode power supplies and hard switched topology applications.

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Low figure-of-merit FOM Ron x Qg

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Low input capacitance CISS

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Reduced switching

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Reduced conduction losses

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Low gate charge Qg

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Avalanche energy rated UIS

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Halogen-free