STMICROELECTRONICS STD12NF06L 晶体管, MOSFET, N沟道, 12 A, 60 V, 80 mohm, 10 V, 2 V
The is a 60V N-channel Power MOSFET developed using unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the MOSFET suitable for use as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer applications and applications with low gate charge driving requirements.
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- Exceptional dv/dt capability
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- Low gate charge
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- High peak power
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- High ruggedness capability
针脚数 3
漏源极电阻 0.08 Ω
极性 N-Channel
耗散功率 30 W
阈值电压 2 V
漏源极电压Vds 60 V
连续漏极电流Ids 12.0 A
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 30 W
安装方式 Surface Mount
引脚数 3
封装 TO-252
长度 6.6 mm
宽度 6.2 mm
高度 2.4 mm
封装 TO-252
产品生命周期 Pre-Release
包装方式 Cut Tape CT
制造应用 Computers & Computer Peripherals, 计算机和计算机周边, Industrial, Communications & Networking, 通信与网络, 工业
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STD12NF06L ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STD12NF06LT4 意法半导体 | 功能相似 | STD12NF06L和STD12NF06LT4的区别 |
NTD18N06LT4G 安森美 | 功能相似 | STD12NF06L和NTD18N06LT4G的区别 |
RFD14N05LSM9A 飞兆/仙童 | 功能相似 | STD12NF06L和RFD14N05LSM9A的区别 |