INFINEON SPP02N80C3XKSA1 功率场效应管, MOSFET, N沟道, 2 A, 800 V, 2.4 ohm, 10 V, 3 V
CoolMOS™C3 功率 MOSFET
得捷:
COOLMOS N-CHANNEL POWER MOSFET
欧时:
Infineon CoolMOS C3 系列 Si N沟道 MOSFET SPP02N80C3XKSA1, 2 A, Vds=800 V, 3引脚 TO-220AB封装
e络盟:
晶体管, MOSFET, N沟道, 2 A, 800 V, 2.4 ohm, 10 V, 3 V
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the SPP02N80C3XKSA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 42000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with coolmos technology.
Verical:
Trans MOSFET N-CH 800V 2A 3-Pin3+Tab TO-220AB Tube
Newark:
# INFINEON SPP02N80C3XKSA1 Power MOSFET, N Channel, 2 A, 800 V, 2.4 ohm, 10 V, 3 V
额定电压DC 800 V
额定电流 2.00 A
针脚数 3
漏源极电阻 2.4 Ω
极性 N-Channel
耗散功率 42 W
阈值电压 3 V
漏源极电压Vds 800 V
连续漏极电流Ids 2.00 A
上升时间 15 ns
输入电容Ciss 290pF @100VVds
下降时间 18 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 42W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.36 mm
宽度 4.57 mm
高度 15.95 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
制造应用 Lighting, Power Management, 工业, Industrial, 照明, Alternative Energy, 替代能源, Consumer Electronics, 电源管理, 消费电子产品
RoHS标准 RoHS Compliant
含铅标准 Contains Lead
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17