SPP24N60C3XKSA1

SPP24N60C3XKSA1图片1
SPP24N60C3XKSA1图片2
SPP24N60C3XKSA1概述

N沟道 650V 24.3A

Feature

• New revolutionary high voltage technology

• Worldwide best RDSon in TO 220

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance


得捷:
MOSFET N-CH 650V 24.3A TO220-3


欧时:
INFINEON MOSFET SPP24N60C3XKSA1


立创商城:
N沟道 650V 24.3A


艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; SPP24N60C3XKSA1 power MOSFET can provide a solution. Its maximum power dissipation is 240000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes coolmos technology.


Verical:
Trans MOSFET N-CH 650V 24.3A 3-Pin3+Tab TO-220AB Tube


Win Source:
MOSFET N-CH 650V 24.3A TO-220


SPP24N60C3XKSA1中文资料参数规格
技术参数

极性 N-CH

耗散功率 240 W

漏源极电压Vds 650 V

连续漏极电流Ids 24.3A

上升时间 21 ns

输入电容Ciss 3000pF @25VVds

额定功率Max 240 W

下降时间 14 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 240W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 无铅

数据手册

在线购买SPP24N60C3XKSA1
型号: SPP24N60C3XKSA1
描述:N沟道 650V 24.3A
替代型号SPP24N60C3XKSA1
型号/品牌 代替类型 替代型号对比

SPP24N60C3XKSA1

Infineon 英飞凌

当前型号

当前型号

SPP24N60C3HKSA1

英飞凌

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SPP24N60C3XKSA1和SPP24N60C3HKSA1的区别

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