

N沟道 650V 24.3A
Feature
• New revolutionary high voltage technology
• Worldwide best RDSon in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
得捷:
MOSFET N-CH 650V 24.3A TO220-3
欧时:
INFINEON MOSFET SPP24N60C3XKSA1
立创商城:
N沟道 650V 24.3A
艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; SPP24N60C3XKSA1 power MOSFET can provide a solution. Its maximum power dissipation is 240000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes coolmos technology.
Verical:
Trans MOSFET N-CH 650V 24.3A 3-Pin3+Tab TO-220AB Tube
Win Source:
MOSFET N-CH 650V 24.3A TO-220
极性 N-CH
耗散功率 240 W
漏源极电压Vds 650 V
连续漏极电流Ids 24.3A
上升时间 21 ns
输入电容Ciss 3000pF @25VVds
额定功率Max 240 W
下降时间 14 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 240W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 无铅
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
SPP24N60C3XKSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
SPP24N60C3HKSA1 英飞凌 | 类似代替 | SPP24N60C3XKSA1和SPP24N60C3HKSA1的区别 |