SPD06N80C3ATMA1

INFINEON  SPD06N80C3ATMA1  功率场效应管, MOSFET, N沟道, 6 A, 800 V, 0.78 ohm, 10 V, 3 V

表面贴装型 N 通道 800 V 6A（Ta） 83W（Tc） PG-TO252-3

得捷:
MOSFET N-CH 800V 6A TO252-3

欧时:
Infineon MOSFET SPD06N80C3ATMA1

立创商城:
N沟道 800V 6A

贸泽:
MOSFET LOW POWER_LEGACY

e络盟:
INFINEON  SPD06N80C3ATMA1  功率场效应管, MOSFET, N沟道, 6 A, 800 V, 0.78 ohm, 10 V, 3 V

艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; SPD06N80C3ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 83000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device is made with coolmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 800MinV 6A 3-Pin TO-252 T/R

Verical:
Trans MOSFET N-CH 800V 6A 3-Pin2+Tab DPAK T/R

Newark:
# INFINEON  SPD06N80C3ATMA1  Power MOSFET, N Channel, 6 A, 800 V, 0.78 ohm, 10 V, 3 V

Win Source:
MOSFET N-CH 800V 6A 3TO252