SPB80N06S08ATMA1

D2PAK N-CH 55V 80A

* N-channel - Normal Level -Enhancement mode * Automotive AEC Q101 qualified * MSL1 up to 260°C peak reflow * 175°C operating temperature * Avalanche test * Repetive Avalanche up to Tjmax = 175 °C * dv /dt rated

得捷:
MOSFET N-CH 55V 80A TO263-3

艾睿:
Amplify electronic signals and switch between them with the help of Infineon Technologies&s; SPB80N06S08ATMA1 power MOSFET. Its maximum power dissipation is 300000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This device utilizes sipmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.

安富利:
Trans MOSFET N-CH 55V 80A 3-Pin2+Tab TO-263

Verical:
Trans MOSFET N-CH 55V 80A Automotive 3-Pin2+Tab D2PAK T/R

Win Source:
MOSFET N-CH 55V 80A D2PAK