SPD15P10PGBTMA1

INFINEON  SPD15P10PGBTMA1  晶体管, 射频FET, -100 V, -15 A, 128 W, TO-252

SIPMOS® P 通道 MOSFET

**Infineon** SIPMOS® 小信号 P 通道 MOSFET 具有多种功能，可能包括增强模式、连续漏极电流（约低至 80A）及宽工作温度范围。 SIPMOS 功率可用于多种应用，包括电信、eMobility、笔记本、直流/直流设备以及汽车工业。

· 符合 AEC Q101 标准（请参阅数据表）

· 无铅引线电镀，符合 RoHS 标准

得捷:
MOSFET P-CH 100V 15A TO252-3

欧时:
Infineon SIPMOS 系列 Si P沟道 MOSFET SPD15P10PGBTMA1, 15 A, Vds=100 V, 3引脚 DPAK TO-252封装

立创商城:
P沟道 100V 15A

贸泽:
MOSFET P-Ch -100V 15A DPAK-2

艾睿:
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the SPD15P10PGBTMA1 power MOSFET. Its maximum power dissipation is 128000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with sipmos technology.

TME:
Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3

Verical:
Trans MOSFET P-CH 100V 15A Automotive 3-Pin2+Tab DPAK T/R

Newark:
# INFINEON  SPD15P10PGBTMA1  RF FET Transistor, -100 V, -15 A, 128 W, TO-252

Win Source:
MOSFET P-CH 100V 15A TO252-3