INFINEON SPW20N60CFDFKSA1 功率场效应管, MOSFET, N沟道, 8.3 A, 600 V, 0.19 ohm, 10 V, 4 V
通孔 N 通道 20.7A（Tc） 208W（Tc） PG-TO247-3
得捷:
MOSFET N-CH 650V 20.7A TO247-3
艾睿:
As an alternative to traditional transistors, the SPW20N60CFDFKSA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 208000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with coolmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Verical:
Trans MOSFET N-CH 650V 20.7A 3-Pin3+Tab TO-247 Tube
Newark:
# INFINEON SPW20N60CFDFKSA1 Power MOSFET, N Channel, 20.7 A, 650 V, 0.19 ohm, 10 V, 4 V
额定电压DC 650 V
额定电流 20.7 A
针脚数 3
漏源极电阻 0.19 Ω
极性 N-Channel
耗散功率 35 W
阈值电压 4 V
输入电容 2.40 nF
栅电荷 124 nC
漏源极电压Vds 650 V
连续漏极电流Ids 20.7 A
上升时间 15 ns
输入电容Ciss 2400pF @25VVds
下降时间 6.4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 208W Tc
安装方式 Through Hole
引脚数 3
封装 TO-247-3
封装 TO-247-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not For New Designs
包装方式 Tube
制造应用 替代能源, Industrial, 工业, 电源管理, 消费电子产品, Alternative Energy, 通信与网络, Power Management, Consumer Electronics, Communications & Networking
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17