SPD15P10PLGBTMA1

Infineon SIPMOS 系列 Si P沟道 MOSFET SPD15P10PLGBTMA1, 15 A, Vds=100 V, 3引脚 DPAK TO-252封装

SIPMOS® P 通道 MOSFET

**Infineon** SIPMOS® 小信号 P 通道 MOSFET 具有多种功能，可能包括增强模式、连续漏极电流（约低至 80A）及宽工作温度范围。 SIPMOS 功率可用于多种应用，包括电信、eMobility、笔记本、直流/直流设备以及汽车工业。

· 符合 AEC Q101 标准（请参阅数据表）

· 无铅引线电镀，符合 RoHS 标准

得捷:
MOSFET P-CH 100V 15A TO252-3

欧时:
Infineon SIPMOS 系列 Si P沟道 MOSFET SPD15P10PLGBTMA1, 15 A, Vds=100 V, 3引脚 DPAK TO-252封装

立创商城:
P沟道 100V 15A

贸泽:
MOSFET P-Ch -100V 15A DPAK-2

e络盟:
功率场效应管, MOSFET, P沟道, 100 V, 15 A, 0.14 ohm, TO-252 DPAK, 表面安装

艾睿:
Compared to traditional transistors, SPD15P10PLGBTMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 128000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This P channel MOSFET transistor operates in enhancement mode. This device utilizes sipmos technology.

安富利:
Trans MOSFET P-CH 100V 15A 3-Pin TO-252 T/R

TME:
Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3

Verical:
Trans MOSFET P-CH 100V 15A Automotive 3-Pin2+Tab DPAK T/R

Newark:
# INFINEON  SPD15P10PLGBTMA1  MOSFET Transistor, P Channel, -15 A, -100 V, 0.14 ohm, -10 V, -1.5 V

Win Source:
MOSFET P-CH 100V 15A TO252-3