P沟道 100V 4A
Summary of Features:
欧时:
INFINEON MOSFET SPD04P10PGBTMA1
得捷:
MOSFET P-CH 100V 4A TO252-3
立创商城:
P沟道 100V 4A
贸泽:
MOSFET P-Ch -100V -4A DPAK-2
艾睿:
Make an effective common gate amplifier using this SPD04P10PGBTMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 38000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with sipmos technology.
安富利:
Trans MOSFET P-CH 100V 4A 3-Pin2+Tab TO-252 T/R
TME:
Transistor: P-MOSFET; unipolar; -100V; -4A; 38W; PG-TO252-3
Verical:
Trans MOSFET P-CH 100V 4A Automotive 3-Pin2+Tab DPAK T/R
额定功率 38 W
极性 P-CH
耗散功率 38 W
漏源极电压Vds 100 V
连续漏极电流Ids 4A
上升时间 8.6 ns
输入电容Ciss 319pF @25VVds
下降时间 4.5 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 38W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.5 mm
宽度 6.22 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Onboard charger
RoHS标准 RoHS Compliant
含铅标准 无铅