N-CH 500V 7.6A
表面贴装型 N 通道 7.6A(Tc) 83W(Tc) PG-TO252-3-1
得捷:
MOSFET N-CH 500V 7.6A TO252-3
贸泽:
MOSFET LOW POWER_LEGACY
艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; SPD08N50C3ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 83000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes coolmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 500V 7.6A 3-Pin TO-252 T/R
Verical:
Trans MOSFET N-CH 500V 7.6A 3-Pin2+Tab DPAK T/R
Win Source:
MOSFET N-CH 500V 7.6A DPAK
漏源极电阻 0.5 Ω
极性 N-Channel
耗散功率 83 W
阈值电压 3 V
漏源极电压Vds 500 V
连续漏极电流Ids 7.6A
上升时间 5 ns
输入电容Ciss 750pF @25VVds
额定功率Max 83 W
下降时间 7 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 83W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.5 mm
宽度 6.22 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
制造应用 Power Management, Communications & Networking, Consumer Electronics
RoHS标准 RoHS Compliant
含铅标准 无铅
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
SPD08N50C3ATMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
SPD08N50C3 英飞凌 | 类似代替 | SPD08N50C3ATMA1和SPD08N50C3的区别 |