N沟道 600V 11A
Description:
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction SJ principle and pioneered by Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation.
**CoolMOS™ CFD2 is replacement for CoolMOS™ CFD** **
>> Go to CoolMOS™ CFD2_Characteristics and applications of CoolMOS_ _™ CFD2
_ Improved cost performance, light load efficiency and ease-of-use in EMI and low voltage overshoot. Soft switching resonant topologies with hard commutation requirements requiring a fast body diode.
Summary of Features:
Benefits:
Target Applications:
漏源极电阻 0.38 Ω
极性 N-Channel
耗散功率 33 W
阈值电压 4 V
漏源极电压Vds 600 V
连续漏极电流Ids 11.0 A
上升时间 18 ns
输入电容Ciss 1200pF @25VVds
额定功率Max 33 W
下降时间 7 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 33W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
SPA11N60CFDXKSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
STP18N55M5 意法半导体 | 功能相似 | SPA11N60CFDXKSA1和STP18N55M5的区别 |
STP11NM60FP 意法半导体 | 功能相似 | SPA11N60CFDXKSA1和STP11NM60FP的区别 |