SPD04N80C3ATMA1

INFINEON  SPD04N80C3ATMA1  功率场效应管, MOSFET, N沟道, 4 A, 800 V, 1.1 ohm, 10 V, 3 V

表面贴装型 N 通道 800 V 4A（Tc） 63W（Tc） PG-TO252-3

得捷:
MOSFET N-CH 800V 4A TO252-3

欧时:
Infineon MOSFET SPD04N80C3ATMA1

立创商城:
N沟道 800V 4A

e络盟:
INFINEON  SPD04N80C3ATMA1  功率场效应管, MOSFET, N沟道, 4 A, 800 V, 1.1 ohm, 10 V, 3 V

艾睿:
If you need to either amplify or switch between signals in your design, then Infineon Technologies&s; SPD04N80C3ATMA1 power MOSFET is for you. Its maximum power dissipation is 63000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 800V 4A 3-Pin TO-252 T/R

Verical:
Trans MOSFET N-CH 800V 4A 3-Pin2+Tab DPAK T/R

Newark:
# INFINEON  SPD04N80C3ATMA1  Power MOSFET, N Channel, 4 A, 800 V, 1.1 ohm, 10 V, 3 V

Win Source:
MOSFET N-CH 800V 4A 3TO252