SGD02N120 系列 1200 V 2 A 表面贴装 快速 IGBT - PG-TO-252-3
IGBT NPT 1200 V 6.2 A 62 W 表面贴装型 PG-TO252-3
得捷:
IGBT 1200V 6.2A 62W TO252-3
e络盟:
单晶体管, IGBT, 6.2 A, 3.1 V, 62 W, 1.2 kV, TO-252 DPAK, 3 引脚
艾睿:
The SGD02N120BUMA1 IGBT transistor from Infineon Technologies is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 62000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
IGBT PRODUCTS
富昌:
SGD02N120 系列 1200 V 2 A 表面贴装 快速 IGBT - PG-TO-252-3
Chip1Stop:
Trans IGBT Chip N-CH 1.2KV 6.2A 3-Pin2+Tab TO-252
Verical:
Trans IGBT Chip N-CH 1200V 6.2A 62000mW 3-Pin2+Tab DPAK T/R
Win Source:
IGBT 1200V 6.2A 62W TO252-3