SPB08P06PGATMA1

INFINEON  SPB08P06PGATMA1  晶体管, MOSFET, P沟道, -8.8 A, -60 V, 0.221 ohm, -10 V, -3 V

SIPMOS® P 通道 MOSFET

**Infineon** SIPMOS® 小信号 P 通道 MOSFET 具有多种功能，可能包括增强模式、连续漏极电流（约低至 80A）及宽工作温度范围。 SIPMOS 功率可用于多种应用，包括电信、eMobility、笔记本、直流/直流设备以及汽车工业。

· 符合 AEC Q101 标准（请参阅数据表）

· 无铅引线电镀，符合 RoHS 标准

欧时:
Infineon SIPMOS 系列 Si P沟道 MOSFET SPB08P06PGATMA1, 8.8 A, Vds=60 V, 3引脚 D2PAK TO-263封装

得捷:
MOSFET P-CH 60V 8.8A D2PAK

贸泽:
MOSFET SMALL SIGNAL+P-CH

e络盟:
晶体管, MOSFET, P沟道, -8.8 A, -60 V, 0.221 ohm, -10 V, -3 V

艾睿:
Amplify electronic signals and switch between them with the help of Infineon Technologies&s; SPB08P06PGATMA1 power MOSFET. Its maximum power dissipation is 42000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes sipmos technology. This P channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET P-CH 60V 8.8A 3-Pin TO-263 T/R

TME:
Transistor: P-MOSFET; unipolar; -60V; -8.8A; 42W; PG-TO263-3

Verical:
Trans MOSFET P-CH 60V 8.8A Automotive 3-Pin2+Tab D2PAK T/R

Newark:
# INFINEON  SPB08P06PGATMA1  MOSFET Transistor, P Channel, -8.8 A, -60 V, 0.221 ohm, -10 V, -3 V

Win Source:
MOSFET P-CH 60V 8.8A TO-263