










DPAK N-CH 30V 60A
N-Channel 30V 60A Tc 100W Tc Surface Mount DPAK
得捷:
MOSFET N-CH 30V 60A DPAK
艾睿:
Compared to traditional transistors, STD60NF3LLT4 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 100000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
安富利:
Trans MOSFET N-CH 30V 60A 3-Pin2+Tab DPAK T/R
富昌:
N-Channel 30 V 0.0095 Ohm Surface Mount STripFET II Power MosFet - TO-252-3
Chip1Stop:
Trans MOSFET N-CH 30V 60A 3-Pin2+Tab DPAK T/R
Verical:
Trans MOSFET N-CH 30V 60A 3-Pin2+Tab DPAK T/R
Win Source:
MOSFET N-CH 30V 60A DPAK
额定电压DC 30.0 V
额定电流 60.0 A
漏源极电阻 7.50 mΩ
极性 N-Channel
耗散功率 100 W
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±16.0 V
连续漏极电流Ids 60.0 A
上升时间 130 ns
输入电容Ciss 2210pF @25VVds
额定功率Max 100 W
下降时间 36.5 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 100W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STD60NF3LLT4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STD100NH03LT4 意法半导体 | 类似代替 | STD60NF3LLT4和STD100NH03LT4的区别 |
STD60NH03LT4 意法半导体 | 类似代替 | STD60NF3LLT4和STD60NH03LT4的区别 |
STD60NF3LL 意法半导体 | 功能相似 | STD60NF3LLT4和STD60NF3LL的区别 |