STMICROELECTRONICS STD30PF03LT4 晶体管, MOSFET, P沟道, -24 A, -30 V, 28 mohm, -10 V, -1 V
P 沟道 STripFET™ 功率 MOSFET,STMicroelectronics
STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。
### MOSFET ,STMicroelectronics
得捷:
MOSFET P-CH 30V 24A DPAK
欧时:
### P 沟道 STripFET™ 功率 MOSFET,STMicroelectronicsSTripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。### MOSFET 晶体管,STMicroelectronics
贸泽:
MOSFET P-Ch 30 Volt 24 Amp
艾睿:
Use STMicroelectronics&s; STD30PF03LT4 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 70000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes stripfet ii technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
安富利:
Trans MOSFET P-CH 30V 24A 3-Pin2+Tab TO-252 T/R
富昌:
STD30PF03L系列 P沟道 30 V 0.028 Ohm STripFET™ II 功率MOSFET - TO-252-3
Chip1Stop:
Trans MOSFET P-CH 30V 24A 3-Pin2+Tab TO-252 T/R
TME:
Transistor: P-MOSFET; unipolar; -30V; -24A; 70W; DPAK
Verical:
Trans MOSFET P-CH 30V 24A 3-Pin2+Tab DPAK T/R
Newark:
# STMICROELECTRONICS STD30PF03LT4 MOSFET Transistor, P Channel, 24 A, -30 V, 28 mohm, -10 V, 1 V
DeviceMart:
MOSFET P-CH 30V 24A DPAK
Win Source:
MOSFET P-CH 30V 24A DPAK
额定电压DC -30.0 V
额定电流 -24.0 A
额定功率 70 W
针脚数 3
漏源极电阻 0.028 Ω
极性 P-Channel
耗散功率 70 W
阈值电压 1 V
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±16.0 V
连续漏极电流Ids 24.0 A
上升时间 122 ns
输入电容Ciss 1670pF @25VVds
额定功率Max 70 W
下降时间 26 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 70W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.2 mm
高度 2.4 mm
封装 TO-252-3
工作温度 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STD30PF03LT4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
NTD25P03LT4G 安森美 | 功能相似 | STD30PF03LT4和NTD25P03LT4G的区别 |
FDD4243 飞兆/仙童 | 功能相似 | STD30PF03LT4和FDD4243的区别 |
FDD6685 飞兆/仙童 | 功能相似 | STD30PF03LT4和FDD6685的区别 |