STD3N80K5

STD3N80K5图片1
STD3N80K5图片2
STD3N80K5图片3
STD3N80K5图片4
STD3N80K5图片5
STD3N80K5图片6
STD3N80K5图片7
STD3N80K5图片8
STD3N80K5图片9
STD3N80K5图片10
STD3N80K5图片11
STD3N80K5概述

N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics### MOSFET 晶体管,STMicroelectronics

N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics


得捷:
MOSFET N-CH 800V 2.5A DPAK


立创商城:
N沟道 800V 2.5A


欧时:
STMicroelectronics MDmesh K5, SuperMESH5 系列 Si N沟道 MOSFET STD3N80K5, 2.5 A, Vds=800 V, 3引脚


艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? STMicroelectronics&s; STD3N80K5 power MOSFET can provide a solution. Its maximum power dissipation is 110000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes supermesh technology.


安富利:
Trans MOSFET N-CH 800V 2.5A 3-Pin DPAK T/R


富昌:
Single N-Channel 800 V 3.5 Ω 60 W Surface Mount Power Mosfet - DPAK


Chip1Stop:
Trans MOSFET N-CH 800V 2.5A 3-Pin2+Tab DPAK Tube


Verical:
Trans MOSFET N-CH 800V 2.5A 3-Pin2+Tab DPAK T/R


儒卓力:
**N-CH 800V 2,5A 3,5Ohm DPAK **


力源芯城:
800V,3.5Ω,2.5A,N沟道功率MOSFET


STD3N80K5中文资料参数规格
技术参数

耗散功率 110 W

漏源极电压Vds 800 V

输入电容Ciss 130pF @100VVds

额定功率Max 60 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 60W Tc

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-252-3

外形尺寸

长度 6.6 mm

宽度 6.2 mm

高度 2.4 mm

封装 TO-252-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准

含铅标准 Lead Free

数据手册

在线购买STD3N80K5
型号: STD3N80K5
描述:N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics ### MOSFET 晶体管,STMicroelectronics

锐单商城 - 一站式电子元器件采购平台