STF35N65M5

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STF35N65M5概述

N沟道650 V, 0.085 I© , 27 A, MDmeshâ ?? ¢在D²PAK V功率MOSFET , TO- 220FP , I²PAK , TO- 220 , TO- 247 N-channel 650 V, 0.085 Ω, 27 A, MDmesh™ V Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247

通孔 N 通道 27A(Tc) 40W(Tc) TO-220FP


得捷:
MOSFET N-CH 650V 27A TO220FP


贸泽:
MOSFET POWER MOSFET N-CH 650V


艾睿:
Compared to traditional transistors, STF35N65M5 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 40000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with mdmesh technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.


安富利:
Trans MOSFET N-CH 650V 27A 3-Pin3+Tab TO-220FP Tube


富昌:
STF35N65M5 系列 650 V 98 mOhm N 沟道 MDmesh™ V 功率 MOSFET - TO-220FP


Chip1Stop:
Trans MOSFET N-CH 650V 27A 3-Pin3+Tab TO-220FP Tube


STF35N65M5中文资料参数规格
技术参数

耗散功率 40 W

漏源极电压Vds 650 V

上升时间 12 ns

输入电容Ciss 3750pF @100VVds

额定功率Max 40 W

下降时间 16 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 40W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

物理参数

材质 Silicon

工作温度 150℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买STF35N65M5
型号: STF35N65M5
描述:N沟道650 V, 0.085 I© , 27 A, MDmeshâ ?? ¢在D²PAK V功率MOSFET , TO- 220FP , I²PAK , TO- 220 , TO- 247 N-channel 650 V, 0.085 Ω, 27 A, MDmesh™ V Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
替代型号STF35N65M5
型号/品牌 代替类型 替代型号对比

STF35N65M5

ST Microelectronics 意法半导体

当前型号

当前型号

STF38N65M5

意法半导体

类似代替

STF35N65M5和STF38N65M5的区别

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