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N 通道 MDmesh™ K3 系列,SuperMESH3™, STMicroelectronics
得捷:
MOSFET N-CH 525V 6A TO220AB
立创商城:
N沟道 525V 6A
欧时:
STMicroelectronics MDmesh K3, SuperMESH3 系列 Si N沟道 MOSFET STP7N52K3, 6 A, Vds=525 V, 3引脚 TO-220封装
e络盟:
STMICROELECTRONICS STP7N52K3 晶体管, MOSFET, N沟道, 6 A, 525 V, 0.72 ohm, 10 V, 3.75 V
艾睿:
As an alternative to traditional transistors, the STP7N52K3 power MOSFET from STMicroelectronics can be used to both amplify and switch electronic signals. Its maximum power dissipation is 90000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device is made with supermesh 3 technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 525V 6.2A 3-Pin3+Tab TO-220 Tube
富昌:
N-Channel 525 V 0.85 Ohm SuperMesh III Power MosFet - TO-220
Chip1Stop:
Trans MOSFET N-CH 525V 6.2A 3-Pin3+Tab TO-220 Tube
Verical:
Trans MOSFET N-CH 525V 6.2A 3-Pin 3+Tab TO-220 Tube
力源芯城:
525V,0.72Ω,6A,N沟道功率MOSFET
Win Source:
MOSFET N-CH 525V 6A TO220AB / N-Channel 525 V 6A Tc 90W Tc Through Hole TO-220
针脚数 3
漏源极电阻 0.72 Ω
极性 N-Channel
耗散功率 90 W
阈值电压 3.75 V
漏源极电压Vds 525 V
连续漏极电流Ids 6.2A
上升时间 22 ns
输入电容Ciss 737pF @100VVds
额定功率Max 90 W
下降时间 22 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 90W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 15.75 mm
封装 TO-220-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STP7N52K3 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STF7N52K3 意法半导体 | 类似代替 | STP7N52K3和STF7N52K3的区别 |
IRF840PBF 威世 | 功能相似 | STP7N52K3和IRF840PBF的区别 |
IRF840APBF 威世 | 功能相似 | STP7N52K3和IRF840APBF的区别 |