STP7N52K3

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STP7N52K3概述

STMICROELECTRONICS  STP7N52K3  晶体管, MOSFET, N沟道, 6 A, 525 V, 0.72 ohm, 10 V, 3.75 V

N 通道 MDmesh™ K3 系列,SuperMESH3™, STMicroelectronics


得捷:
MOSFET N-CH 525V 6A TO220AB


立创商城:
N沟道 525V 6A


欧时:
STMicroelectronics MDmesh K3, SuperMESH3 系列 Si N沟道 MOSFET STP7N52K3, 6 A, Vds=525 V, 3引脚 TO-220封装


e络盟:
STMICROELECTRONICS  STP7N52K3  晶体管, MOSFET, N沟道, 6 A, 525 V, 0.72 ohm, 10 V, 3.75 V


艾睿:
As an alternative to traditional transistors, the STP7N52K3 power MOSFET from STMicroelectronics can be used to both amplify and switch electronic signals. Its maximum power dissipation is 90000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device is made with supermesh 3 technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


安富利:
Trans MOSFET N-CH 525V 6.2A 3-Pin3+Tab TO-220 Tube


富昌:
N-Channel 525 V 0.85 Ohm SuperMesh III Power MosFet - TO-220


Chip1Stop:
Trans MOSFET N-CH 525V 6.2A 3-Pin3+Tab TO-220 Tube


Verical:
Trans MOSFET N-CH 525V 6.2A 3-Pin 3+Tab TO-220 Tube


力源芯城:
525V,0.72Ω,6A,N沟道功率MOSFET


Win Source:
MOSFET N-CH 525V 6A TO220AB / N-Channel 525 V 6A Tc 90W Tc Through Hole TO-220


STP7N52K3中文资料参数规格
技术参数

针脚数 3

漏源极电阻 0.72 Ω

极性 N-Channel

耗散功率 90 W

阈值电压 3.75 V

漏源极电压Vds 525 V

连续漏极电流Ids 6.2A

上升时间 22 ns

输入电容Ciss 737pF @100VVds

额定功率Max 90 W

下降时间 22 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 90W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

长度 10.4 mm

宽度 4.6 mm

高度 15.75 mm

封装 TO-220-3

物理参数

工作温度 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

数据手册

在线购买STP7N52K3
型号: STP7N52K3
描述:STMICROELECTRONICS  STP7N52K3  晶体管, MOSFET, N沟道, 6 A, 525 V, 0.72 ohm, 10 V, 3.75 V
替代型号STP7N52K3
型号/品牌 代替类型 替代型号对比

STP7N52K3

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