N 通道 MDmesh™,600V/650V,STMicroelectronics### MOSFET 晶体管,STMicroelectronics
N 通道 MDmesh™,600V/650V,STMicroelectronics
### MOSFET ,STMicroelectronics
欧时:
MOSFET N-Channel 650V 11A TO220
得捷:
MOSFET N-CH 600V 11A TO220-3
立创商城:
N沟道 600V 11A
艾睿:
If you need to either amplify or switch between signals in your design, then STMicroelectronics&s; STP13NM60N power MOSFET is for you. Its maximum power dissipation is 90000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with mdmesh ii technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 650V 11A 3-Pin3+Tab TO-220 Tube
富昌:
STP13NM60N 系列 N 沟道 600 V 0.36 Ohm MDmesh™ II 功率 MOSFet - TO-220-3
Chip1Stop:
Trans MOSFET N-CH 600V 11A 3-Pin3+Tab TO-220 Tube
TME:
Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; TO220-3
Verical:
Trans MOSFET N-CH 600V 11A 3-Pin3+Tab TO-220AB Tube
Newark:
# STMICROELECTRONICS STP13NM60N Power MOSFET, Mdmesh, N Channel, 11 A, 600 V, 280 mohm, 10 V, 3 V
儒卓力:
**N-CH 600V 11A 360mOhm TO220-3 **
力源芯城:
600V,0.28Ω,11A,N沟道功率MOSFET
Win Source:
MOSFET N-CH 600V 11A TO-220
通道数 1
漏源极电阻 0.28 Ω
极性 N-Channel
耗散功率 90 W
阈值电压 3 V
漏源极电压Vds 600 V
连续漏极电流Ids 5.50 A
上升时间 8 ns
输入电容Ciss 790pF @50VVds
额定功率Max 90 W
下降时间 10 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 90W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 15.75 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
香港进出口证 NLR
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STP13NM60N ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP18N55M5 意法半导体 | 类似代替 | STP13NM60N和STP18N55M5的区别 |
STP10NM60N 意法半导体 | 类似代替 | STP13NM60N和STP10NM60N的区别 |