N沟道620 V， 1.28欧姆， 4.2 SuperMESH3功率MOSFET N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET
This power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 70000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
通道数 1
漏源极电阻 1.28 Ω
极性 N-Channel
耗散功率 70 W
阈值电压 3.75 V
漏源极电压Vds 620 V
漏源击穿电压 620 V
连续漏极电流Ids 4.2A
上升时间 8 ns
输入电容Ciss 680pF @50VVds
额定功率Max 70 W
下降时间 21 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 70W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
封装 TO-263-3
工作温度 -55℃ ~ 150℃
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STB5N62K3 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STD5N62K3 意法半导体 | 完全替代 | STB5N62K3和STD5N62K3的区别 |
STU5N52K3 意法半导体 | 功能相似 | STB5N62K3和STU5N52K3的区别 |
IRFBC40ASPBF 威世 | 功能相似 | STB5N62K3和IRFBC40ASPBF的区别 |