






N 通道 MDmesh™ SuperMESH™,250V 至 650V,STMicroelectronics### MOSFET 晶体管,STMicroelectronics
N 通道 MDmesh™ SuperMESH™,250V 至 650V,STMicroelectronics
### MOSFET ,STMicroelectronics
欧时:
STMicroelectronics MDmesh, SuperMESH 系列 Si N沟道 MOSFET STE40NC60, 40 A, Vds=600 V, 4引脚 ISOTOP封装
立创商城:
N沟道 600V 40A
得捷:
MOSFET N-CH 600V 40A ISOTOP
艾睿:
This STE40NC60 power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 460000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -65 °C to 150 °C.
安富利:
Trans MOSFET N-CH 600V 40A 4-Pin ISOTOP Tube
富昌:
N-Channel 600 V 0.13 Ohm PowerMesh II MosFet - ISOTOP
Chip1Stop:
Trans MOSFET N-CH 600V 40A 4-Pin ISOTOP Tube
TME:
Module; single transistor; Uds:600V; Id:23A; ISOTOP; 460W; screw
Verical:
Trans MOSFET N-CH 600V 40A 4-Pin ISOTOP Tube
额定电压DC 600 V
额定电流 40.0 A
额定功率 460 W
漏源极电阻 130 mΩ
极性 N-Channel
耗散功率 460 W
漏源极电压Vds 600 V
漏源击穿电压 600 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 40.0 A
上升时间 42 ns
输入电容Ciss 11100pF @25VVds
额定功率Max 460 W
下降时间 26 ns
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 460W Tc
安装方式 Screw
引脚数 4
封装 ISOTOP
长度 38.2 mm
宽度 25.5 mm
高度 9.1 mm
封装 ISOTOP
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STE40NC60 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STN4NF03L 意法半导体 | 功能相似 | STE40NC60和STN4NF03L的区别 |
STE53NC50 意法半导体 | 功能相似 | STE40NC60和STE53NC50的区别 |
STE48NM50 意法半导体 | 功能相似 | STE40NC60和STE48NM50的区别 |