STB8NM60D

N沟道600V - 0.9ヘ - 8A - TO- 220 / D2PAK快速二极管MDmesh⑩功率MOSFET N-CHANNEL 600V - 0.9ヘ - 8A - TO-220/D2PAK Fast Diode MDmesh⑩ Power MOSFET

表面贴装型 N 通道 600 V 8A（Tc） 100W（Tc） D2PAK

得捷:
MOSFET N-CH 600V 8A D2PAK

艾睿:
This STB8NM60D power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 100000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device utilizes mdmesh technology. This MOSFET transistor has an operating temperature range of -65 °C to 150 °C.

安富利:
Trans MOSFET N-CH 600V 8A 3-Pin2+Tab D2PAK T/R

富昌:
STB8NM60D 系列 N 沟道 600 V 1 Ohm MDmesh™ 功率 Mosfet - D2PAK

Chip1Stop:
Trans MOSFET N-CH 600V 8A 3-Pin2+Tab D2PAK T/R

Verical:
Trans MOSFET N-CH 600V 8A 3-Pin2+Tab D2PAK T/R

Win Source:
MOSFET N-CH 600V 8A D2PAK