N 通道 STripFET™ H7 系列,STMicroelectronicsSTripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。### MOSFET 晶体管,STMicroelectronics
N 通道 STripFET™ H7 系列,STMicroelectronics
STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。
得捷:
MOSFET N-CH 100V 40A TO220FP
欧时:
STMicroelectronics STripFET H7 系列 Si N沟道 MOSFET STF80N10F7, 40 A, Vds=100 V, 3引脚 TO-220FP封装
贸泽:
MOSFET N-Ch 100V 0.0085 Ohm typ 40A STripFET VII
e络盟:
功率场效应管, MOSFET, N沟道, 100 V, 40 A, 0.0085 ohm, TO-220FP, 通孔
艾睿:
Thanks to STMicroelectronics, both your amplification and switching needs can be taken care of with one component: the STF80N10F7 power MOSFET. Its maximum power dissipation is 30000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes stripfet vii technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 100V 40A 3-Pin TO-220FP Tube
Chip1Stop:
Trans MOSFET N-CH 100V 40A 3-Pin3+Tab TO-220FP Tube
Verical:
Trans MOSFET N-CH 100V 40A 3-Pin3+Tab TO-220FP Tube
Win Source:
MOSFET N-CH 100V 40A TO-220FP
通道数 1
针脚数 3
漏源极电阻 270 mΩ
耗散功率 30 W
阈值电压 4 V
输入电容 3100 pF
漏源极电压Vds 100 V
漏源击穿电压 100 V
上升时间 32 ns
输入电容Ciss 3100pF @50VVds
额定功率Max 30 W
下降时间 13 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 30W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 16.4 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 医用
RoHS标准 RoHS Compliant
含铅标准 Lead Free