STMICROELECTRONICS STY60NM50 晶体管, MOSFET, N沟道, 60 A, 500 V, 50 mohm, 10 V, 4 V
The is a MDmesh™ N-channel Zener-protected Power MOSFET associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics. The proprietary strip technique yields overall dynamic performance that is significantly better. It is suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
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- 0.045R RDS ON
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- High dV/dt and avalanche capability
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- Improved ESD capability
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- Low input capacitance and gate charge
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- Low gate input resistance
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- Tight process control
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- Lowest ON-resistance
额定电压DC 500 V
额定电流 60.0 A
通道数 1
针脚数 3
漏源极电阻 0.05 Ω
极性 N-Channel
耗散功率 560 W
阈值电压 4 V
漏源极电压Vds 500 V
漏源击穿电压 500 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 60.0 A
上升时间 58 ns
输入电容Ciss 7500pF @25VVds
额定功率Max 560 W
下降时间 46 ns
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 560W Tc
安装方式 Through Hole
引脚数 3
封装 TO-247-3
宽度 5.3 mm
封装 TO-247-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Industrial, 工业, Power Management, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STY60NM50 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
IXFH60N50P3 IXYS Semiconductor | 功能相似 | STY60NM50和IXFH60N50P3的区别 |
IRFPS40N50LPBF 威世 | 功能相似 | STY60NM50和IRFPS40N50LPBF的区别 |
IRFPS43N50KPBF 威世 | 功能相似 | STY60NM50和IRFPS43N50KPBF的区别 |