N沟道30 V , 0.005 Ω , 14 A - SO- 8的STripFET ™ V功率MOSFET N-channel 30 V, 0.005 Ω, 14 A - SO-8 STripFET™ V Power MOSFET
表面贴装型 N 通道 14A(Tc) 2.7W(Tc) 8-SO
得捷:
MOSFET N-CH 30V 14A 8SOIC
贸泽:
MOSFET N-channel 30 V
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the STS14N3LLH5 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 2700 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with stripfet v technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Chip1Stop:
Trans MOSFET N-CH 30V 14A 8-Pin SO N T/R
Win Source:
MOSFET N-CH 30V 14A 8SOIC
通道数 1
漏源极电阻 5 mΩ
极性 N-Channel
耗散功率 2.7 W
阈值电压 1 V
漏源极电压Vds 30 V
漏源击穿电压 30 V
连续漏极电流Ids 7.00 A
上升时间 14.5 ns
输入电容Ciss 1500pF @25VVds
额定功率Max 2.7 W
下降时间 4.5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.7W Tc
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.65 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Obsolete
包装方式 Tape & Reel TR
制造应用 Power Management, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STS14N3LLH5 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STS11NF30L 意法半导体 | 类似代替 | STS14N3LLH5和STS11NF30L的区别 |
IRF7821TRPBF 英飞凌 | 功能相似 | STS14N3LLH5和IRF7821TRPBF的区别 |
IRF7413TRPBF 英飞凌 | 功能相似 | STS14N3LLH5和IRF7413TRPBF的区别 |